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The electrical properties and reliability of MOS devices based on high-k dielectrics can be affected when the gate stack is subjected to an annealing process, which can lead to the polycrystallization of the high-k layer. In this work, a Conductive Atomic Force Microscope (C-AFM) has been used to study the nanoscale electrical conduction and reliability of amorphous and polycrystalline HfO 2 ...
High-k dielectrics have been introduced in MOS devices to reduce gate leakage currents. However, their polycrystallization during a thermal annealing can affect the electrical properties and reliability of scaled devices. In this work, a Conductive Atomic Force Microscope (CAFM) has been combined with standard electrical characterization techniques at wafer level to investigate (I.) how the polycrystallization...
The gate dielectric breakdown (BD) reversibility in MOSFETs with ultra-thin hafnium based high-k dielectric is studied. The phenomenology is analyzed in detail and the similarities with the resistive switching phenomenon emphasized. The results suggest that the conductive path in the dielectric after BD can be `opened' and `closed' many times and that the BD recovery partially restores not only the...
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