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Passivation, functionalization, and atomic layer deposition (ALD) via H2O2(g) and trimethylaluminum (TMA) dosing were studied on the clean Si0.6Ge0.4(001) surface at the atomic level using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Chemical analysis of the surface was performed with in-situ X-ray photoelectron spectroscopy (XPS) while density functional theory (DFT)...
In-situ gas phase cleaning of the Ge(100) surface was studied at the atomic level using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) while chemical analysis of the surface was performed using X-ray photoelectron spectroscopy (XPS). High purity H2O2(g) dosing removed carbon contamination from an air exposed Ge(100) sample. The oxide formed via H2O2(g) dosing was subsequently...
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