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RTN (Random Telegraph Noise) impact on data-retention failure/recovery mechanism has been investigated in scaled (∼1Ynm) 2-dimensional (2D) TLC (3bits/cell) NAND flash memories. The data-retention failure is caused by the electron de-trapping from the tunnel oxide in memory cells, which have 5∼8 times higher population of large threshold voltage shift by RTN (ΔVTH_RTN) than normal memory cells. Also,...
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