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In this paper, the nanowire (NW) line-edge/width roughness (LER/LWR) effects in Si nanowire transistors (SNWTs) are investigated by both experiments and theoretical analysis. New LER/LWR characteristics are first observed in SNWTs, which exhibits suppressed randomization and enhanced systematic variation, rather than pure random LER/LWR in planar and FinFET devices. An improved characterization method...
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