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In article number 1808377, Huaibin Shen, Lin Song Li, and co‐workers fabricate light‐emitting diodes with an external quantum efficiency >30% by exploiting Zn1−xCdxSe core/shell quantum dots with ZnSe as the intermediate layer and ultrathin ZnS. The maximum brightness achieved is up to 334 000 cd m−2, and the operational lifetime is extended to ≈1 800 000 h at 100 cd m−2.
In the study of hybrid quantum dot light‐emitting diodes (QLEDs), even for state‐of‐the‐art achievement, there still exists a long‐standing charge balance problem, i.e., sufficient electron injection versus inefficient hole injection due to the large valence band offset of quantum dots (QDs) with respect to the adjacent carrier transport layer. Here the dedicated design and synthesis of high luminescence...
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