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The low-frequency (1/f) noise of gate-all-around silicon nanowire transistors (SNWTs) with different gate electrodes (poly-Si gate, doped fully silicided (FUSI) gate, and undoped FUSI gate) is studied in the strong-inversion linear region. It shows that the gate electrodes have a strong impact on the 1/f noise of the SNWTs. The highest noise is observed in the SNWTs with a poly-Si gate, compared to...
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