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Phase change memory (PCM) has been proposed to replace NOR flash and DRAM in embedded systems because of its attractive features. However, the endurance of PCM greatly limits its adoption in embedded systems. As most embedded systems are application-oriented, we can tackle the endurance problem of PCM by exploring application-specific features such as fixed access patterns and update frequencies....
Three-dimensional (3D) flash memory is emerging to fulfil the ever-increasing demands of storage capacity. In 3D NAND flash memory, multiple layers are stacked to increase bit density and reduce bit cost of flash memory. However, the physical architecture of 3D flash memory leads to a higher probability of disturbance to adjacent physical pages and greatly increases bit error rates. This paper presents...
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