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A Si-rich silicon carbide (Si1−xCx) based p-n junction photovoltaic solar cells is demonstrated by growing the non-stoichiometric SixC1−x film with plasmas enhanced chemical vapor deposition (PECVD) at low RF plasmas powers. By decreasing RF plasma power from 100 to 20 W at medium substrate temperature of 500°C, the X-ray photoelectron spectroscopy (XPS) analysis confirms an decreasing composition...
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