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We estimate the roughening‐induced scattering optical losses in III‐nitride current aperture laser diodes (CA‐LDs) caused by imperfect photoelectrochemical (PEC) etching of the active region of a InGaN multi quantum well (MQW) laser diode. Roughness data were obtained by atomic force microscope (AFM) and scanning electron microscope (SEM) image processing of the remnant PEC‐etched waveguides...
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