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Scanning tunneling electroluminescence (STL) microscopy is performed on a 3 nm‐thick InGaN/GaN quantum well (QW) with [In] = 0.23 such that the main light emission occurs in the green. The technique is used to map the radiative recombination properties at a scale of a few nanometers and correlate the local electroluminescence map with the surface topography simultaneously imaged by scanning tunneling...
Metal‐polar InN quantum dots (QDs) are grown by metalorganic chemical vapor deposition at temperatures between 500 and 600 °C. Dot densities between 4 × 108 and 4 × 1010 cm−2 are observed. InN QDs exhibit room‐temperature photoluminescence (PL) with peak wavelengths from 1100 to >1550 nm. GaN cap layers grown on InN QDs have little effect on either peak PL wavelength or intensity, a step toward...
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