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In this paper, we propose a sub-1-V nanopower current reference based on dual-threshold voltage current mirror stages, used to compensate the temperature dependence of the current of a diode-connected transistor operating in deep subthreshold region. The proposed solution has been designed in a 0.18 μm CMOS technology and analyzed through circuit simulations. Simulation results show an output current...
In this paper, a variation-aware simulation framework is introduced for hybrid circuits comprising MOS transistors and spintronic devices (e.g., magnetic tunnel junction-MTJ). The simulation framework is based on one-time characterization via micromagnetic multi-domain simulations, as opposed to most of existing frameworks based on single-domain analysis. As further distinctive capability, stochastic...
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