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EOT scale down is a critical issue in LaO/AlO capped Hf-based devices, because it will result in serious VFB roll-off. The incorporation of capping layer induces more traps in the gate stack. These traps are oxygen vacancy related defects and are sensitive to reliability stress. By using the oxygen vacancies detection method, we demonstrate that these oxygen vacancy defects are near to IL (SiO2)....
The impact of the Si cap/SiGe layer on the Hf-based high-k /metal gate SiGe channel pMOSFET performance and reliability has been investigated. We proposed an optimized strain SiGe channel with a Si cap layer to overcome the Ge diffusion and confine the channel carriers in the strained SiGe layer without the formation of a significant parasitic channel at the interface. With this optimized Si/SiGe...
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