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Part I of this paper introduced a two-stage model for reliability characterization and lifetime prediction of amorphous-silicon thin-film transistors (a-Si TFTs) under low gate-field stress that includes both charge trapping in the silicon nitride (SiNx) gate dielectric and defect generation in the a-Si channel. In part II, the model is used to experimentally reduce the drain current instability under...
EEG is an important modality for many medical purposes. However, the low-amplitude of signals (10-to-100µV) and large number of channels (∼20) raise numerous challenges, including electrode setup (correct placement, skin preparation, sanitation), patient comfort (number of channels, skin abrasion), and robust acquisition (electrode/wire motion artifacts, wire stray coupling). The recent emergence...
A double-heterojunction c-Si solar cell was fabricated at maximum process temperature of 100°C. We demonstrate an electron-selective passivated contact to Si using TiO2, which increased the open-circuit voltage by 45 mV compared to a device with a direct metal to n-type substrate contact. In the fabricated structure, PEDOT/Si replaced the front-side p-n junction of conventional Si-based solar cells...
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