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This paper reports the design, fabrication and demonstration of MEMS electrostatic digital mirror array (8 channels) integrated with 40 V level-shifter drivers by the CMOS-first MEMS-last processing technique. A CMOS chip of high voltage level-shifter array (2.9 mm times 2.9 mm) was pre-fabricated on an 8-mum-thick SOI wafer, and micromechianical structures were post-processed by deep reactive ion...
We report monolithic integration of MEMS (micro electro mechanical systems)actuators and high-voltage driver circuits into a silicon chip. Driver circuits of up to 40 V were prepared on an 8-mum thick SOI (silicon-on-insulator) wafer by the DMOS (double-diffused metal oxide semiconductor) processes, after which MEMS electrostatic actuators were integrated into the identical SOI layer by post-processing...
This paper presents a monolithic integration technique of MEMS grating light valves with high-voltage (40 V) driver circuits that target for image projection display devices. Driver circuits were prepared on an 8-mum-thick SOI (Silicon-on- Insulator) wafer by the DMO S (Double-diffused Metal Oxide Semiconductor) processes, after which the MEMS grating were integrated in the identical SOI layer by...
We present a newly developed technology platform for monolithically integrating high voltage DMOS (double-diffused metal oxide semiconductor) circuits upwards of 40 V with bulk-micromachined actuators (XY-stage) using both the top and the bottom surfaces of an SOI (silicon-on-insulator) wafer. Driver circuits were pre-fabricated on an 8-mum-thick SOI wafer by the DMOS processes, after which MEMS electrostatic...
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