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This paper presents a novel method for gate capacitances extraction of Insulated Gate Bipolar Transistor (IGBT). Gate capacitances are critical for IGBT physical models with accurate turn-on/off transient characteristics. The model is developed and expanded based on the conventional IGBT physical model, and the developed method can be obtained by several simple experiments. The presented method was...
This paper presents a physical modeling method for Non Punch Through (NPT) Insulated Gate Bipolar Transistors (IGBTs). The model is based on the solution to ambipolar diffusion equation (ADE) and can be achieved by engineering software MATLAB or PSPICE. The presented model is verified by experiments. With an interface between the presented model and thermal model of IGBT module, the model can be extended...
This paper presents a physical based model for high power trench gate Insulated Gate Bipolar Transistors (IGBTs). The presented model is developed and improved based on Fourier Based Model for IGBTs and power diodes. With the model realization based Matlab Simulink/ Pspice, the model is verified by experiments. Comparing with the conventional IGBT models, the present model gives high speed and accurate...
Solder delamination is one of the main failure modes of IGBT module. When the severity of the failure mode is different, the temperature character of IGBT is also different. This paper presents a methodology based on 3D thermal-electro coupling finite elements modeling intended to analyze the relation between the failure degree and the temperature, The results suggest when the area of solder delamination...
Like the one used in industrial applications, the motor drive system for electric vehicle (EV) is composed of a three phase inverter, a motor controller, a motor and a sensor system. The difference is that the motor drive system for EV is packaged with much higher power density and its operation status changes frequently. A direct consequence is the key components such as insulated gate bipolar transistor...
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