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Transport properties of microcrystalline (μc-Si/H) and polycrystalline (p-Si) silicon films are analyzed by time resolved microwave conductivity (TRMC), diffusion-induced TRMC (DTRMC), and Hall measurements. The comparison of carrier mobilities in microcrystalline silicon determined by TRMC as well as DTRMC shows that trapping in the disordered part of these films is not the main limiting parameter...
The time resolved microwave conductivity (TRMC) technique measures the transient change in microwave reflectivity that carriers generated by a laser pulse induce in a sample. The reflectivity variation with time reflects, combined with the mobility, the carrier generation or recombination, either in the bulk or at the interfaces. From the measurements, one may deduce the carrier lifetime, and the...
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