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Highly linear and efficient InGaAsP phase modulators are presented. These devices show an order of magnitude higher linearity than bulk or quantum well phase modulators, while their efficiency is comparable to the best reported values
The active layer of our modulators is based on the stepped quantum wells. The absorption spectrum of the quantum wells was modeled using an effective mass approach, and the excitonic effect was modeled with a variational method. Modulator structures are based on GaInAsP quaternary system, and are grown by low-pressure metal organic vapor phase epitaxy (MOVPE) on n-type InP substrates. The thickness...
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