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With the trend towards ever-powerful chip and evermore-intense heat fluxes, the thermal issues of packages are becoming increasingly important for power ICs. One of the most effective approach to improve thermal management of ICs is leadframe optimization. In this paper, we present a revised leadframe of DIP8 package which includes a bigger die pad connecting to two pins. The simulation results and...
In this paper, the detailed characterizations of the lateral insulated-gate bipolar transistor (LIGBT) for the electrostatic discharge (ESD) protection of power ICs are presented. Compared with the conventional lateral DMOS with the same structure except for the anode doping type, the LIGBT shows lower triggering voltage, faster voltage-clamping speed, and much higher ESD robustness. Experimental...
An optimized process design of the p-type lateral extended drain MOS transistor (pLED-MOS) for PDP driver ICs is developed. The following issues such as surface damage, parasitic BJT punch-through phenomenon, impurity segregation effect and creep behavior of the breakdown voltage are investigated. Various approaches are therefore sought in order to solve these reliability problems by optimizing the...
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