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This paper reports on microwave power results of InAlN/GaN HEMTs on silicon carbide substrate. It is shown a power density higher than 10W/mm up to 10GHz. Investigations based on diamond substrate or heat spreaders on top of the device to improve the thermal dissipation are also described.
The first results obtained from AlGaN/GaN HEMT devices on MBE epitaxial structures grown on 'composite' substrates are presented. These substrates are based on innovative structures in which a thin Si single crystal layer is transferred on top of a thick polycrystalline SiC wafer. The fabrication of the transistors is based on a process flow close to those used on epitaxy on Si bulk substrates. The...
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