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The dielectric charging in RF MEMS capacitive switches is modeled. The modeling focus on charge injections processes and the calculations start from first principles. The calculations were performed on materials with uniform and exponential distribution of defects. The time and bias dependence of distribution of injected charges are derived. The dielectric charging/polarization build-up is derived...
This paper deals with TLP and HBM test results for RF-MEMS capacitive switches. The methodology for each ESD testing simulator is commented, taking into account the accordance between the test bench and the device-under-test. The failure criteria of the tested structures are reported, showing their breakdown process under ESD.
The discharging processes in silicon nitride dielectric film of RF-MEMS capacitive switches are investigated for the first time. The study includes the dependence of discharging as a function of temperature that allows the detection of thermally activated mechanisms. The discharging time constants were found to depend only on temperature and not on the actuation bias polarity.
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