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This paper discusses the mechanisms responsible for charging of plasma enhanced chemical vapor deposition (PECVD) silicon nitride films used in the fabrication of RF microelectromechanical (MEMS) switches. Nitride films deposited at different temperatures are characterized in order to better understand the effect of deposition conditions on material stoichiometry and stress. Both RF MEMS switches...
The electrical properties of thin film SiNx that has been deposited with PECVD method at 150°C and 250°C are investigated on evaporated and electroplated Au substrates. The aim is to extract the parameters that can be introduced in modeling and simulation tools for MEMS design. The present work provides information on the dielectric charging and its dependence on the film thickness,...
The discharging processes in silicon nitride dielectric film of RF-MEMS capacitive switches are investigated for the first time. The study includes the dependence of discharging as a function of temperature that allows the detection of thermally activated mechanisms. The discharging time constants were found to depend only on temperature and not on the actuation bias polarity.
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