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In order to compare the performance differences of IGBTs/VDMOSFETs based on wide bandgap material 4H-SiC and silicon(Si), the basic theory of semiconductor physics for 4H-SiC and Si was used to describe the quantitative relationship of carrier mobility with doping concentration, output I-V curves with devices design and fabrication parameters, switching characteristics with material properties and...
This paper presents a single-inductor dual-output (SIDO) boost converter operating adaptively in pseudo-continuous conduction mode (PCCM). By employing an on-line charge meter, the freewheel switching current of the converter is instantaneously adjusted based on load conditions so that conduction loss in the freewheel switch is minimized. Moreover, switching loss of the freewheel switch is also reduced...
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