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We present high areal density GaxIn1-xP quantum dots grown on GaP substrate by molecular beam epitaxy and report a detailed structural and optical analysis. The composition dependent luminescence is evaluated and linked to the morphology.
InAs Columnar Quantum Dash (CQDash) structures on (100) InP for polarization insensitive semiconductor optical amplifiers have been realized. Photoluminescence and electroluminescence measurements confirm a strong relationship between the polarization degree of the emission and the orientation of the CQDashes. The polarization properties of the CQDash emission could thus be changed from predominantly...
The influence of p-type modulation doping on the static and dynamic properties of QDash lasers on (100) InP has been investigated. Though the differential gain was found to rise 60% for doping concentrations of 50 holes per QDash for constant cavity length lasers, enhanced gain compression and enlarged thermal heating limit the modulation response. Therefore, the maximum modulation bandwidth of 8...
Laterally coupled, complex distributed feedback lasers based on InAs/ InGaAs/InAlGaAs/InP quantum dash-in-a-well layers emitting in the 1.9 mum wavelength range were fabricated. Total CW powers above 25 mW at room temperature and sidemode suppression ratios of more than 35 dB are demonstrated, which makes the devices promising for gas sensing applications.
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