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This letter reports on the influence of illumination conditions on the detector response of three-terminal devices. Antenna-coupled field-effect transistors for the plasmonic detection of THz radiation (TeraFETs) were realized using a 0.25- AlGaN/GaN process. Integrated bow-tie antennas are connected to the source, drain and gate terminals of electrically identical transistors in various...
We discuss the modelling, implementation and characterization of antenna-coupled field-effect transistor detectors for THz frequencies. Detectors have been fabricated using a commercial 65-nm CMOS foundry process. At 4.1 THz resonance frequency and optimum operation conditions a responsivity of 86 V/W and noise-equivalent power of 113 pW/√Hz has been measured.
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