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We report on the photoresponse of AlGaN/GaN HEMT to THz radiation of low and high intensity. We show that the response vs. gate bias dependence can be described by the theory of Dyakonov-Shur in the whole range of radiation intensity. Unusual behavior of the photoresponse vs. intensity was observed under laser irradiation: a quadratic increase of the response followed by saturation. We speculate that...
The channel of nanometre field effect transistor can act as a resonant cavity for plasma waves. The frequency of these plasma waves is in the Terahertz range and can be tuned by the gate bias. During the last few years Terahertz detection and emission related to plasma wave instabilities in nanometre size field effect transistors was demonstrated experimentally. In this work we review the recent experimental...
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