The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A fast and continuous tuning of a 3.1-THz GaAs-based quantum-cascade laser is demonstrated. This is achieved by illuminating its rear facet with a high-power, near-infrared diode laser. The spectral position of the THz laser modes can be adjusted by the illumination power. The maximum tuning range achieved in pulsed mode at a temperature of 35 K is 9.1 GHz.
It has been demonstrated that external uniaxial stress applied to silicon crystals doped by bismuth and antimony influences on the emission spectrum of intracenter lasers under CO2 laser pumping. For small stress the spin-orbit coupling of lower laser working states can be tuned. The details of frequency change depend on crystallographic orientation and donor element.
Spectral characteristics of quantum cascade lasers operating at about 2.5 terahertz have been investigated by means of high-resolution mixing spectroscopy. Linewidth, frequency tunability and frequency stability of the lasers were measured by mixing their radiation with radiation from a 2.5 terahertz gas laser (heterodyne mixing). The results of the homodyne mixing of different modes of the laser...
The frequency of optically pumped terahertz silicon lasers can be tuned by shifting the energy levels involved in the laser process. We have demonstrated the feasibility to tune the frequency of the terahertz silicon lasers by applying an external magnetic field or an external compressive force.
Terahertz silicon lasers are based on intracenter transitions of group-V donors. The peculiarities due to electron-phonon interaction and the state-of-the-art performance such as frequency tunability by stress or magnetic field are discussed.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.