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The impact of packaging materials on the joint reliability of double-side packaged SiC power devices has been investigated at 250 °C for up to 2,000 h. The SiC Schottky Barrier Diode (SBD) power device was double-side packaged with different solders such as Au-20wt.%Sn and Pb-10wt.%Sn or Ag paste. The mechanical and electrical properties of the packaged devices were then aged at 250 °C to evaluate...
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