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This paper reports the DC and RF characteristics of AlN/GaN MOS-HEMTs passivated with thin Al2O3 formed by thermal oxidation of evaporated aluminium. Device fabrication involved wet etching of evaporated Al from the ohmic contact regions prior to metal deposition. This approach yielded an average contact resistance of ~0.76 Ωmm extracted from transmission line method (TLM) characterisation. Fabricated...
This paper reports a novel method for producing low ohmic contact resistance, RC, as well as low sheet resistance, Rsh, on AlN/GaN MOS-HEMT structures. The method relies on the protection of the very sensitive AlN epi-layer from exposure to liquid chemicals during processing using evaporated Al, which on thermal oxidation forms Al2O3. The Al2O3 acts as a surface passivant and as a gate dielectric...
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