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This paper reports the DC and RF characteristics of AlN/GaN MOS-HEMTs passivated with thin Al2O3 formed by thermal oxidation of evaporated aluminium. Device fabrication involved wet etching of evaporated Al from the ohmic contact regions prior to metal deposition. This approach yielded an average contact resistance of ~0.76 Ωmm extracted from transmission line method (TLM) characterisation. Fabricated...
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