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Atomic layer processing has been demonstrated for doping of SiGe during Reduced Pressure Chemical Vapour Deposition (RPCVD) in a commercial single wafer reactor. Atomic level control of dose and location has been obtained for B doping using B 2 H 6 and for P doping using PH 3 . The main idea of atomic layer processing is the separation of adsorption of the reactant gases from...
We applied atomic layer processing for base doping of high performance SiGe:C heterojunction bipolar transistors (HBTs) fabricated within a 0.25μm BiCMOS technology. B atomic layer doping (ALD) was performed at 400 o C during an interruption of the epitaxial SiGe:C base layer deposition. Atomic level dopant location and dose control was achieved.Electrical properties of atomic layer and box-profile...
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