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The crystallization behavior of amorphous silicon carbon alloys films was investigated using infrared spectroscopy and transmission electron microscopy. The films were prepared by plasma enhanced chemical vapor deposition and the thickness and composition were checked by Rutherford backscattering spectroscopy. Annealing processes were carried out in the temperature range of 750-1100 o C in...
The transition from amorphous to crystalline phase in silicon carbide was investigated by infrared spectroscopy and transmission electron microscopy (TEM). Amorphous silicon carbide films on silicon substrate were deposited by plasma enhanced chemical vapour deposition. Quantitative analysis of the crystalline fraction has been performed by IR measurements. The crystallisation kinetic was monitored...
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