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Resistive-switching random access memory (RRAM) devices are attracting increasing interest as a potential candidate for high-density nonvolatile memory devices. One of the main issues toward RRAM feasibility is the reduction of the reset current Ireset necessary to restore the high-resistance state in the device. Ireset can be reduced by controlling the size of the conductive filament responsible...
NiO-based resistive-switching memory (RRAM) is attracting a growing research interest for high-density non-volatile storage applications. One of the most difficult challenges for RRAM-based high-density memories is the high current necessary for the reset operation (Ireset), which limits the possibilities of scaling for the select diode in the cross-bar memory array. This work addresses the scalability...
The success of non-volatile memory (NVM) in the last two decades have relied on the relentless downscaling of MOS-based Flash devices. Entering the 2X nm technology, the physical scaling of Flash memories will have to face potential reliability and feasibility showstoppers. To understand the ultimate scaling limits of the Flash technology and to evaluate alternative memory concepts, physically-based...
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