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NiO-based resistive-switching memory (RRAM) is a promising new technology for high-density non-volatile storage. The main obstacles to practical application in nonvolatile memories are the variability of program/erase voltages, the large and hardly scalable programming current and the cell reliability. We have investigated data retention in RRAM samples with NiO as active switching material. Temperature-accelerated...
Resistance distributions for the reset state in phase-change-memory arrays are studied as a function of the programming conditions. The statistical distribution displays a low-resistance tail, which may potentially affect the resistance window between the two states in the memory device. The majority of tail cells are found to result from the statistical dispersion of the quenching properties of the...
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