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This paper presents a high-mobility low-power ZnO thin film transistor deposited at low temperature on plastic substrates. A mobility of 52 cm2/Vs is achieved for this transistor, signifying its application in flexible electronics and displays.
Amorphous silicon (a-Si) thin-film transistor (TFT) backplanes are very promising for active-matrix organic light-emitting diode displays (AMOLEDs) on plastic. The technology benefits from a large manufacturing base, simple fabrication process, and low production cost. The concern lies in the instability of the TFTs threshold voltage (VT) and its low device mobility. Although VT-instability can be...
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