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Heavily arsenic‐doped Czochralski (HAs‐CZ) silicon is an important substrate material for manufacturing power electronic devices. The arsenic impurities may be in a supersaturated status in a certain temperature range during the HAs‐CZ silicon crystal growth or the device fabrication. Then, whether and how the arsenic impurities can precipitate in HAs‐CZ silicon is an intriguing and practically significant...
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