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Behavior of epoxy resin is critical for performance and reliability of electronic packages. The ability to predict properties of cross linked epoxy resin prior to laboratory synthesis will facilitate the materials design. Theoretical studies in this field face a big challenge because there is no conventional way to build atomistic models of specific polymers, which form a network. Molecular dynamics...
Since recent years, the micro-electronic industry changes the material usage, design and structure, in order to satisfy the customer demands of the higher performance and smaller size. One of the examples is the change of the basic materials from Al/SiO2 to Cu/low-k in IC interconnect structure. As a consequence, new reliability issues at device/product level have been discovered, and most of the...
We propose a molecular modeling method which is capable of modeling the mechanical impact of the porosity and pore size to the amorphous silicon-based low-dielectric (low-k) material. Due to the electronic requirement of advanced electronic devices, low-k materials are in demand for the IC backend structure. However, due to the amorphous nature and porosity of this material, it exhibits low mechanical...
Mechanical stiffness and density of III-V (GaAs) nanowire (NW) are studied by atomistic simulation in the <111>, <110> and <100> directions. Series of molecular models are established and mechanical characteristics of the crystal orientations are considered. The simulation results indicate that the NW exhibits highest structural stiffness in the <111> direction. We also found...
We propose an atomic simulation techniques to understand the chemical-mechanical relationship of amorphous/porous silica based low-dielectric (low-k) material (SiOC(H)). The mechanical stiffness of the low- k material is a critical issue for the reliability performance of the IC backend structures. Due to the amorphous nature of the low-k material which has till now unknown molecular structure, a...
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