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A method to laminate a thin monocrystalline Si layer to a conductive and fracture-resistant carrier such as steel has been developed, resulting in a practical design for high volume production of robust ultra-thin (10–20 μm) “kerfless” Si wafers. With this technology front and rear cell features based on the world-record PERL cell design have been integrated. A confirmed efficiency of 15.1% has been...
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