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The irradiation and annealing responses of Ge pMOSFETs have been investigated under transmission gate bias. Both the radiation-induced charge trapping and the low frequency (1/f) noise increase with total ionizing dose and decrease with annealing time. The smallest increases in noise after irradiation are observed for Ge pMOSFETs with the lowest halo implantation doses. The smallest increases in oxide...
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