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This paper consists of comparative study of U-DG-GS-NMOSFET for different channel lengths(Lch). Channel length below 100 nm leads to Short Channel Effects (SCEs). Gate Induced Drain Leakage (GIDL) and Drain Induced Barrrier Lowering are the major problem for any short channel device. Gate Stack arrangement is used to reduce GIDL and source-drain underlap regions are used to minimize the effects of...
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