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This paper describes a route toward quantum state manipulation by using twin InSb/GaAs quantum dots (QDs) as building blocks. The discussion on the advantage of staggered (type-II) band alignment in InSb/GaAs heterojunction is given first. For the generation of coupled/entangled electronic state, symmetric twin is desired. However, asymmetric twin is typically expected from the fabrication point of...
The paper reports an theoretical investigation on the effects of material intermixing in epitaxial Ga(As)Sb/GaAs quantum dots (QDs). Conditions of type-II band alignment of Ga(As)Sb/GaAs is considered. The fabrication of Ga(As)Sb/GaAs QDs by molecular beam epitaxy is briefly described. Finite element analysis of strain in and around QD is performed. Strain-induced bandgap modification is considered...
GaSb quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a 4-monolayer (ML) InxGa1−xAs (x = 0.07, 0.15, 0.20 and 0.25) to investigate the effects of In-mole-fraction of InGaAs insertion layers on the structural and optical properties of the GaSb QDs. The density of GaSb QDs grown is approximately 1.2–2.8×109cm−2 on InGaAs insertion layers which depends on the In-mole-fraction...
The paper describes a method to calculate electronic band structure, carrier wave function and quantized energies of dome-shaped GaSb/GaAs quantum dot (QD) structure. Type-II band alignment of GaSb/GaAs is introduced. Then, fabrication of realistic GaSb/GaAs QDs by molecular beam epitaxy is described. Based on the structural information obtained from realistic QD, finite element analysis of strain...
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