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The recessed trapezoidal groove dual‐gate profile is achieved by the low power CF4 plasma etching based on the principle of ion‐scattering. The recessed trapezoidal groove dual‐gate architecture can increase the lateral broadening of depletion width, yielding the Enhancement‐mode operation. This device demonstrates a threshold voltage of 0.43 V, a maximum drain current of 480 mA mm−1 and a trans‐conductance...
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