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The Schottky‐barrier static induction transistor (SIT) does not require any p‐type materials and gate dielectrics for its operation, providing a straightforward way to develop GaN‐based high‐frequency power devices. The first derivative of output curves of a Schottky‐junction vertical channel GaN SIT with sub‐micrometer‐sized fin was studied by Jaeyi Chun et al. at Stanford WBG‐Lab (article number...
The first derivative of output curves of a Schottky‐junction vertical channel GaN static induction transistor (SIT) with a submicrometer‐sized fin is studied to understand its fundamental electrical properties. It is found that the derivative of output curves increases with the increase in drain voltage (Vds) in ohmic region because of the raised potential minima in the channel, which is not seen...
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