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The transient response of a new type of varactor diode consisting of a semiconductor multilayer structure has been calculated by 2-dimensional time-dependent computer simulation. The simulated results show that the transient time of such a diode is somewhat larger than that of the conventional one with the same material parameters and diode dimensions.
Experimental studies of a new type of varactor diode consisting of a semiconductor multilayer structure have been performed. It is shown that such a varactor diode has much stronger nonlinearity in capacitance variation with applied bias voltage than does the conventional varactor, which will enable efficient generation of millimetre waves by direct frequency multiplication of high order.
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