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Si-based field-plate 0.13μm gate length metal-oxide-semiconductor field effect transistor (Si MOSFET) with field-plate (FP) lengths of 0.1μm, 0.2μm, and 0.3μm have been fabricated and investigated. The field-plate metals were connected to gate electrode in this study to improve device gate resistance (R g ) resulting in the better microwave performance. By increasing the length of field-plate...
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