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We give an overview on our recent achievements in the field of SOH integration, covering in-device electro-optic coefficients r33 in excess of 200 pm/V, highly efficient Mach-Zehnder modulators, IQ modulators, and modulator-based frequency comb generators
Silicon photonics offers tremendous potential for inexpensive high-yield photonic-electronic integration by enabling fabless fabrication and joint processing of photonic and electronic circuitry. Silicon as an optical material, however, falls short of certain properties that are indispensable for high-performance devices. In particular, bulk silicon does not feature any second-order optical nonlinearity...
Silicon waveguides can be functionalized with an organic -nonlinear cladding. This complements silicon photonics with the electro-optic (EO) effect originating from the cladding and enables functionalities such as pure phase modulation, parametric amplification, or THz-wave generation. Claddings based on a polymer matrix containing chromophores have been introduced, and their strong ...
We report on high-speed multilevel signal generation with silicon-organic hybrid Mach-Zehnder modulators. Pure phase modulation exploiting the linear electro-optic effect allows to generate 28 GBd BPSK, 4-ASK and 8-ASK signals up to 84 Gbit/s.
We report on high-speed multilevel signal generation and arbitrary pulse shaping with silicon-organic hybrid (SOH) Mach–Zehnder interferometer (MZI) modulators. Pure phase modulation exploiting the linear electrooptic effect allows the generation of multiple modulations formats at highest speed such as 40-Gbit/s on–off-keying (OOK) and binary-phase-shift keying (BPSK) and 28-Gbd 4-ASK and 8-ASK with...
A 40 Gbit/s electro-optic modulator is demonstrated. The modulator is based on a slotted silicon waveguide filled with an organic material. The silicon organic hybrid (SOH) approach allows combining highly nonlinear electro-optic organic materials with CMOS-compatible silicon photonics technology.
CMOS-compatible silicon photonics combined with covers of χ(2) or χ(3)-nonlinear organic material allows electro-optic modulators and all-optical wavelength converters for data rates of 100 Gbit/s and beyond. The devices are not impaired by free carriers.
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