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Fig 2 shows a cross sectional SEM image of the channel area after etching tungsten prior to stripping the PMMA etch mask. The thickness of the ZnO film measured ∼52 nm, both in the channel area and underneath the source/drain pads, indicating that the ZnO film was not thinned during the plasma-etch process. Fig 3(a) and (b) show the ID-VD output characteristics of a ZnO TFT with a 155 nm and 425 nm...
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