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In this paper, we discuss the progress in the application of silicon‐on‐diamond (SOD) and chemically vapour deposited (CVD) diamond wafers as an alternative solution to silicon and silicon carbide (SiC) substrates to enhance heat dissipation away from the active region of AlGaN/GaN high electron mobility transistors (HEMT) while decreasing thermal degradation due to thermal effects. The superior thermal...
In this work we present the epitaxial and device results of AlInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy. High quality AlInN/GaN HEMT structures with sub‐10 nm AlInN barrier were grown with very low Ga background level (<1%). The low Rsh of 215 Ω/sq was obtained with an excellent standard deviation of 1.1% across 3″ wafers. Lehighton RT contactless Hall tests show a high mobility...
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