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This paper investigates the effects of MOVPE growth parameters on the gate leakage characteristics of InAlN HEMT structures and compares leakage current paths in AlGaN and InAlN HEMT structures on a nanometer scale. The gate leakage characteristics of AlGaN and InAlN HEMT were compared, and the large leakage current in InAlN HEMT was found to result from the high‐density 2DEG‐induced strong electric...
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