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We present the shortest and narrowest high-κ/metal gate n- and pFETs on compressively strained enriched SiGe On Insulator (c-SGOI) reported to date (LG=20nm; W=30nm; TSiGe=15nm). The range of active area widths in this work allows observing the transition from biaxial to uniaxial stress due to lateral elastic strain relaxation, and its benefit down to 20nm gate length on hole mobility and pFET performance...
By applying an external uniaxial mechanical stress, we have extracted, for the first time, the piezoresistance coefficients of biaxially strained and unstrained fully-depleted silicon-on-insulator (FD-SOI) nMOS transistors that integrate a HfO 2 /TiN gate stack. We have shown that when a uniaxial stress is added to a biaxial stress, the resulting piezoresistance effect is not a linear superposition...
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