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This paper reports 13.56 MHz and 27.1 MHz class-E amplifiers with a high voltage GaN-HEMT as the main switching device showing the possibility of GaN-HEMTs in high frequency switching power applications such as RF power-supply applications. The 380 V/1.9 A GaN power-HEMT was designed and fabricated for high-voltage power electronics applications. The demonstrated 13.56 MHz circuit achieved the output...
The theoretical limit of a lateral wide band-gap semiconductor (WBS) power device was estimated for SiC, GaN and diamond. The lateral WBS device realizes ultra-low on-resistance due to a very short gate-drain offset, and a power integration circuit with very high power can be easily realized even with a small chip. The lateral WBS devices with breakdown voltage of over 1 kV realized on-resistance...
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